Without doping, silicon is just an inert crystal. The book contrasts (traditional, but plagued by lateral spread) and ion implantation (modern, but requires high‑temperature annealing).
Fabrication requires both additive (deposition) and subtractive (etching) steps. The 4th edition clarifies the vital distinction between (simple but poorly controlled) and dry anisotropic etching (the workhorse of CMOS). fabrication engineering at the micro- and nanoscale 4th pdf
A physical textbook is linear; a PDF is searchable. Use these strategies: Without doping, silicon is just an inert crystal